GaAs RF Electronics

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GaAs Electronic Devices
II-VI’s pHEMT GaAs process technology and associated standard product offering represent the output of many years of experience working closely with system engineers in various end markets. All products are 100% DC and RF tested at wafer level to ensure technical compliance to specification. Products can be supplied in either die form or as diced wafers ready for automated assembly. All die-level products are 100% visually inspected. All products supplied at wafer-level have an accompanying electronic wafer map clearly identifying known RF good die.

II-VI’s GaAs products enable a broad range of applications.

SiC Electronic Devices
II-VI delivers bare die on wafer according to the customer’s design. A custom specific fabrication process is prepared by combining and adjusting II-VI standard process modules.
  • Complete process line: Prototype fabrication, pilot production
  • Full process control: Traceability, standard unit process modules
  • Wafer level testing: Measurement and analyzing, documentation

 

Products

GaAs Electronic Devices

GaAs Device Applications

Discrete Low noise Amplifiers

  • Low noise and driver amplifiers
  • Voltage controlled oscillators
  • Point-to-point and digital radio
  • Cellular output amplifier
  • Satellite uplink transmitters

Broadband switches

  • Test instrumentation
  • Fiber optics
  • Broadband communications

MMIC amplifiers

  • Low noise front end amplification
  • Satellite communications gain blocks
SiC Device Fabrication
Custom Specific Design
II-VI’s SiC material and device fabrication is based on 20 years’ experience from SiC technology development resulting in well-established unit process modules. A custom specific manufacturing process is designed by combining and adjusting the process modules according to the customer’s specific device design. In many cases II-VI contributes with unique process technology and design solutions to improve further the device performance. The process integration is verified and evaluated in close cooperation with the customer. This enables a cost-efficient realization of manufacturing processes.


Device Prototyping
For design verification

  • Complete 100mm process line: Prototype fabrication, pilot production
  • Full process control: Traceability, Standard unit process modules
  • Wafer level testing: Measurement & analyzing, Documentation

SiC Process Modules
II-VI has developed a unique set of key processes enabling the fabrication of advanced SiC power devices, as well as for example sensors for exhaust gases, UV detection, or pressure measurement.
  • Substrate Buffer Technology: Reducing defects penetrating from substrate into device epi
  • Advanced SiC Epitaxy: Multilayer pn-junctions, thick epilayers & embedded structures
  • Ion Implantation Doping: Hot high energy implantation and high temperature anneal
  • Deep Trench Etching: 1-20 ?m with precise side-wall control for void-free re-growth
  • Gate Oxide Technology: Advanced oxide technology with in-situ-doped polysilicon gate
  • Ohmic & Schottky Contact: Wide range of metal combinations and silicide processes
  • Metallization Process: Thick Aluminum for wire bonding
  • Edge Termination: Combined with thick passivation for HV devices
SiC Device Technologies
II-VI offer a number of power device technologies. The process can be optimized to meet the specific requirements, e.g. packaging compatible metallization.
  • Schottky diode: For material evaluation
  • JBS diode: Both implanted and epitaxial 3DSiC concepts
  • HV-PiN diode: Epitaxial anode and pn-junction grown in one run
  • Vertical DMOSFET/UMOSFET: Advanced gate oxide technology using deposited oxides
  • Epitaxial buried grid JFET: Based on embedded epitaxial technology
SiC Device Applications
Power electronics is a key technology for efficient use of electricity. Today already 40% of the worlds’ energy consumption is provided by electric power. It is expected that this share will increase to about 60% until 2040. Total sales of power semiconductors is growing 10% per year. This is driven by the need for more efficient use of electricity, by increasing use of renewable energy and by moving to electric vehicles.
Electricity has to be converted in many steps by adjusting voltage and frequency before it can be consumed. Using conventional silicon based power electronics 5-10% of the energy is lost in each conversion step, or even up to 20% with simple passive 50Hz transformers. With Silicon Carbide (SiC) these losses can be radically reduced, theoretically up to 90%! This will have large impact on high power electrical systems.
The following are some applications where the use of SiC brings advantages:
  • Electric vehicles motor drives, chargers and charge stations
  • Power supplies with battery back-up (UPS) for data centers
  • Solar power inverters for DC to AC conversion
  • Industry motor drives for speed controlled pumps, fans and machines
  • Train motor drives and auxiliary power
  • Offshore wind AC to DC conversion
  • Solid state power transformer for grid
  • Speed control of MW motors in process industry

The main benefits with SiC power electronics are:

Energy efficiency

  • SiC extends the driving range of an electric car by 10%.
  • More efficient re-use of braking energy in a commuter train can save 30% electricity.
  • ROI for replacing an old transformer in 247 operation with SiC is less than 3 years.

System efficiency

  • Smaller size
    Switching frequency can be increased 10x with SiC. Therefore capacitors, coils and magnetics can be smaller and the size of the power converter can be reduced by 80%. The lower weight also makes installation and handling easier.
  • Less cooling.
    Lower losses generate less heat and thus require less cooling efforts. This simplifies the whole system design by e.g. replacing water cooling with passive air-cooling.
  • Lower cost
    Less amount of material and simplified cooling reduce the total cost of power converter.

 

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