Epitaxial devices are the key to improving the performance of semiconductor-reliant products like smartphones, tablets, datacenters, displays and fiberoptic networks. Epitaxial devices consist of nanolayers of semiconductor crystals that are uniformly deposited in sophisticated deposition tools to form an “epi-wafer.” Combining different semiconductor materials and dopants in an epi wafer is the key step in determining the performance capabilities of photonics and RF semiconductor components.

Custom epitaxy for a variety of device applications ranging from BiFETs to LEDs

From LED and laser wafers used in displays to RF wafers used in smartphones, II-VI products are geared toward enabling higher performance photonic and RF components for consumer, communications, network and mobile applications and RF components for wireless handsets, tablets and the Internet of things.

II-VI offers advanced silicon carbide (SiC) epitaxy material and custom specific device chip development and fabrication from prototyping to volume production. II-VI produces SiC epitaxy on up to 150 mm wafers with best in class uniformity. We offer a complete SiC material solution with flexible specifications.

• Thick epilayers with or without buffer, low doped layers up to 250 ?m
• Multi-layer structures with various doping levels, including pn-junctions
• In process epitaxy, embedded & buried structures, contact layers