High performance, custom epitaxial wafers

Power electronics epitaxial wafers

Epitaxial Wafers

Epitaxial devices are the key to improving the performance of semiconductor-reliant products like smartphones, tablets, datacenters, displays and fiberoptic networks. Epitaxial devices consist of nanolayers of semiconductor crystals that are uniformly deposited in sophisticated deposition tools to form an “epi-wafer.” Combining different semiconductor materials and dopants in an epi wafer is the key step in determining the performance capabilities of photonics and RF semiconductor components.

Custom epitaxy for a variety of device applications ranging from BiFETs to LEDs

II-VI develops and manufactures compound semiconductor epitaxial wafers for application in optical components, wireless devices and high-speed communication systems. The company’s products provide these applications additional performance, such as greater bandwidth, higher power efficiency and better reliability.

From LED and laser wafers used in displays to RF wafers used in smartphones, II-VI products are geared toward enabling higher performance photonic and RF components for consumer, communications, network and mobile applications and RF components for wireless handsets, tablets and the Internet of things.

II-VI offers advanced silicon carbide (SiC) epitaxy material and custom specific device chip development and fabrication from prototyping to volume production. II-VI produces SiC epitaxy on up to 150 mm wafers with best in class uniformity. We offer a complete SiC material solution with flexible specifications.

  • Thick epilayers with or without buffer, low doped layers up to 250 ?m
  • Multi-layer structures with various doping levels, including pn-junctions
  • In process epitaxy, embedded & buried structures, contact layers

II-VI Incorporated to Acquire Ascatron and Outstanding Interests in INNOViON for Vertically Integrated Silicon Carbide Power Electronics Technology Platform

August 12, 2020
Ascatron AB - Kista, Sweden: Silicon carbide (SiC) epitaxial wafers and devices for power electronics INNOViON Corporation - Colorado Springs, CO, U.S.: Ion implantation technology and services for semiconductor devices Transactions expected to close by the end of calendar year 2020 Acquisitions complement the technology licensed from General Electric (NYSE: GE) to manufacture SiC devices and modules for power electronics II-VI Incorporated (Nasdaq: IIVI), a leader in compound semiconductors, today announced that it has entered into a definitive agreement to...
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